发明名称 High Endurance Non-Volatile Memory Devices
摘要 High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.
申请公布号 US2011197017(A1) 申请公布日期 2011.08.11
申请号 US201113089898 申请日期 2011.04.19
申请人 SUPER TALENT ELECTRONICS, INC. 发明人 YU I-KANG;CHOW DAVID Q.;LEE CHARLES C.;MA ABRAHAM CHIH-KANG;SHEN MING-SHIANG
分类号 G06F12/02;G06F12/08 主分类号 G06F12/02
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