发明名称 SYSTEMS AND METHODS FOR WRITING TO MULTIPLE PORT MEMORY CIRCUITS
摘要 A multiple-port RAM circuit has a data-in line (DIN) coupled to multiple bit lines (a-bit, b-bit) and multiple bit line bars (a-bitb, b-bitb). The circuit also has multiple word lines (a-wl, b-wl). A memory cell is coupled to the bit lines, bit line bars, and word lines. The circuit further includes a controller (201) that enables the word lines to substantially simultaneously write a value from the bit lines to the memory cell.
申请公布号 WO2011097457(A1) 申请公布日期 2011.08.11
申请号 WO2011US23716 申请日期 2011.02.04
申请人 QUALCOMM INCORPORATED;YANG, HAINING;WANG, ZHONGZE;JUNG, CHANGHO 发明人 YANG, HAINING;WANG, ZHONGZE;JUNG, CHANGHO
分类号 G11C8/16;G11C11/412 主分类号 G11C8/16
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