POWER TRANSISTOR WITH IMPROVED HIGH-SIDE OPERATING CHARACTERISTICS AND REDUCED RESISTANCE AND RELATED APPARATUS AND METHOD

摘要

A method includes forming a transistor device (100) on a first side of a semiconductor-on-insulator structure. The semiconductor-on-insulator structure includes a substrate (105, 505), a dielectric layer (140, 520), and a buried layer (135, 507) between the substrate and the dielectric layer. The method also includes forming a conductive plug (150, 160, 605) through the semiconductor-on-insulator structure. The conductive plug is in electrical connection with the transistor device. The method further includes forming a field plate (145, 1510) on a second side of the semiconductor-on-insulator structure, where the field plate is in electrical connection with the conductive plug. The transistor device could have a breakdown voltage of at least 600V, and the field plate could extend along at least 40% of a length of the transistor device.