发明名称 |
NON-VOLATILE MEMORY DEVICE HAVING BOTTOM ELECTRODE |
摘要 |
Provided is a non-volatile memory device including a bottom electrode disposed on a substrate and having a lower part and an upper part. A conductive spacer is disposed on a sidewall of the lower part of the bottom electrode. A nitride spacer is disposed on a top surface of the conductive spacer and a sidewall of the upper part of the bottom electrode. A resistance changeable element is disposed on the upper part of the bottom electrode and the nitride spacer. The upper part of the bottom electrode contains nitrogen (N). |
申请公布号 |
US2011193048(A1) |
申请公布日期 |
2011.08.11 |
申请号 |
US201113087189 |
申请日期 |
2011.04.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH GYU-HWAN;JUNG SUG-WOO;IM DONG-HYUN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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