| 摘要 |
A solid state imaging device includes a P− well region 3 formed in an N− type layer 2 in a state in which the N− type layer remains in a surface layer of a semiconductor substrate, a photodiode having a light reception region that generates photocharges by light irradiation, a carrier pocket 6 in which the photocharges are accumulated, a P+ type high concentration diffusion layer 5 that discharges the photocharges accumulated in the carrier pocket, a modulation gate electrode that is formed over the carrier pocket through a gate dielectric film 1a, and a reset gate electrode 4a that is formed over a portion between the carrier pocket 6 and the P+ type high concentration diffusion layer 5 through a gate dielectric film 1b.
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