发明名称 |
NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE |
摘要 |
A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
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申请公布号 |
US2011193060(A1) |
申请公布日期 |
2011.08.11 |
申请号 |
US201113090757 |
申请日期 |
2011.04.20 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
LEE HYUK MIN;KIM HYUN KYUNG;KIM DONG JOON;SHIN HYOUN SOO |
分类号 |
H01L33/32;H01L33/06;H01L33/38;H01L33/42 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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