| 摘要 |
<p>Disclosed is an optical information acquiring element which is provided with: a p-type semiconductor layer (31); an n-type surface embedded region (33), which is embedded in the semiconductor layer (31) so as to configure a photodiode with the semiconductor layer (31); an n-type charge accumulating region (36), which is embedded in the surface embedded region (33), and which accumulates charges generated by the photodiode; a p-type barrier forming region, which is embedded in the surface embedded region (33), and which forms a potential barrier by sandwiching the surface embedded region (33) with the semiconductor layer (31); and an n-type charge discharging region (34), which is embedded in the semiconductor layer (31), and which stores and discharges excessive charges flowed out from the charge accumulating region (36) over the potential barrier. The optical information acquiring element transfers, at a high speed, electrons generated by light by receiving optical communication signals and taking out the change of the potential of the charge accumulating region (36) as signals. An optical information acquiring element array, and a hybrid solid-state image pickup device, which performs, at a high speed, image acquisition and information acquisition by means of optical communication, are also provided.</p> |
