| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of improving the throughput, a temperature control method of the substrate processing apparatus, and a method of manufacturing a device which uses the substrate processing apparatus and the temperature control method. <P>SOLUTION: There are provided a first chamber 16, which depressurizes the atmosphere of a wafer W under the atmospheric pressure to obtain a depressurized atmosphere, and a second chamber 12 which applies a predetermined treatment to the wafer W, having been transported from the first chamber 16. A temperature control mechanism is provided which controls the temperature inside the second chamber 12, to a set temperature that corresponds to the temperature of the wafer W changing, accompanying the change from atmospheric pressure inside the first chamber 16 to a depressurized atmosphere. <P>COPYRIGHT: (C)2011,JPO&INPIT |
