| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus, along with a method of manufacturing a silicon based film using the same, capable of forming a high quality silicon based film at a high speed for a substrate with a large area in order to improve an electricity generation efficiency and productivity, and further to achieve a low cost in an application of the plasma CVD apparatus in the field of manufacturing the microcrystal silicon film of a thin-film silicon solar cell and the passivation film of a polycrystal silicon solar cell or the like. <P>SOLUTION: In the plasma CVD apparatus with a pair of parallel plate electrodes, a plurality of recesses, and protrusions or flat portions are formed on one of the pair of electrodes, and a plurality of raw material gas blowout holes through each of which raw material gas is blew out are formed in the protrusions or flat portions, respectively, and a plurality of diluting gas blowout holes through each of which diluting gas is blew out are arranged in the recesses, respectively. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
