| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor having a region of high crystallization in a channel formation region and a high resistance region between a source and a drain, and thus having a high electric effect mobility and a large on-current. SOLUTION: The thin-film transistor includes an "impurity which suppresses generation of crystal nuclei" in the base layer on the surface thereof, a first wiring layer formed on the base layer, an impurity semiconductor layer having at least a part contacting the first wiring, a semiconductor layer having at least a part electrically connected to the first wiring layer via the impurity semiconductor layer, a first insulating layer formed on the semiconductor layer, a second insulating layer formed to cover the first insulating layer with at least the semiconductor layer, and a second wiring layer formed to be superimposed on at least part of the impurity semiconductor layer and between a source region and a drain region formed by the impurity semiconductor layer on the second semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT |
