发明名称 |
METHOD AND APPARATUS OF FORMING A GATE |
摘要 |
The present disclosure provides an apparatus that includes a semiconductor device. The semiconductor device includes a substrate. The semiconductor device also includes a first gate dielectric layer that is disposed over the substrate. The first gate dielectric layer includes a first material. The first gate dielectric layer has a first thickness that is less than a threshold thickness at which a portion of the first material of the first gate dielectric layer begins to crystallize. The semiconductor device also includes a second gate dielectric layer that is disposed over the first gate dielectric layer. The second gate dielectric layer includes a second material that is different from the first material. The second gate dielectric layer has a second thickness that is less than a threshold thickness at which a portion of the second material of the second gate dielectric layer begins to crystallize.
|
申请公布号 |
US2011193180(A1) |
申请公布日期 |
2011.08.11 |
申请号 |
US20100700901 |
申请日期 |
2010.02.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN JIAN-HAO;LEE DA-YUAN;HSU KUANG-YUAN |
分类号 |
H01L29/51;H01L21/283 |
主分类号 |
H01L29/51 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|