SILICON WAFER AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon wafer composed of a silicon crystal having high C-mode characteristics and excellent pressure-proof characteristics of an oxide film; and to provide a method for producing the silicon wafer. SOLUTION: This silicon wafer includes nitrogen and hydrogen, and is characterized in that: there exist a plurality of voids constituting a foamy void aggregate by≥50% in total number of voids; a V1 area where the void density exceeding 2×104/cm3and <1×105/cm3occupies≤20% in the total area of the silicon wafer; the V2 area where the void density is 5×102to 2×104/cm3occupies≥80% in the total area of the silicon wafer; and the inner microdefect density is≥5×108/cm3. COPYRIGHT: (C)2011,JPO&INPIT