| 摘要 |
PROBLEM TO BE SOLVED: To inhibit a reduction of capacitance of a capacitor, without causing increase in film thickness. SOLUTION: In a semiconductor device with a capacitor 100, the capacitor 100 is provided with a lower electrode 112, an upper electrode 16, and an insulating film 14 sandwiched between the lower electrode 112 and the upper electrode 16. The lower electrode 112 is made of titanium nitride with the surface of the lower electrode 112 on the insulating film 14 side, further nitrided to form a nitrogen-rich layer 118. The formation of a nitrogen-rich layer 118 on the surface of the lower electrode 112 effectively inhibits oxidation of the upper surface of the lower electrode 112. In particular, the effect is large in DRAM, where since the capacitance of a capacitor is large, and a leakage current is also reduced inside the capacitor. COPYRIGHT: (C)2011,JPO&INPIT
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