PYROLYTIC BORON NITRIDE VESSEL FOR CRYSTAL GROWTH, AND GROWTH METHOD FOR SEMICONDUCTOR CRYSTAL USING SAME

摘要

Disclosed is a pyrolytic boron nitride vessel which can maintain a complete round cross-sectional shape even if the diameter is large, and which exhibits little deformation, even after multiple use. The pyrolytic boron nitride vessel is used in a semiconductor crystal growth method in which a raw material melt held in the vertical vessel is solidified from the bottom towards the vessel opening. The pyrolytic boron nitride vessel is characterised by having a fixed diameter section with a practically uniform cross-sectional area, and by being provided with a step section at a predetermined position from the vessel opening where the inner diameter or outer diameter is changed and where D=54mm and x=5mm when D is the diameter of a complete round having the same area as the cross-sectional area inside the fixed diameter section and x is the distance from the vessel opening to the top edge of the step section. Preferably, 5mm=x=L/3 or 5mm=x=D when L is the length from the bottom edge of the fixed diameter section to the vessel opening.