ANNEALING METHOD FOR CARRYING OUT ANNEALING STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a method for annealing structure having at least a single wafer. SOLUTION: The annealing method has a first annealing step for bringing the structure into contact with a holder (312) at a first position, and annealing the structure in an oxidizing atmosphere so that an oxidized layer (310) is formed at least on a part of the exposed surface of the structure. The annealing method further has a step for changing the position of the structure on the holder at a second position where one or a plurality of contacting regions (314) are exposed between the structure in the course of the first annealing step and the holder; and a second annealing step where the structure is annealed at the second position in the oxidizing atmosphere. COPYRIGHT: (C)2011,JPO&INPIT