| 摘要 |
The present disclosure relates to a method for producing an indium-tin-oxide layer, comprising: providing a substrate to be coated in a sputtering chamber; providing a rotatable non-bonded target around a backing tube for coating the substrate in the sputtering chamber; and sputtering the material from the target in an atmosphere containing an O2/H2 mixture. Further the present disclosure relates to a sputtering system comprising a sputtering chamber having at least one gas inlet and being adapted for at least one backing tube for a non-bonded rotatable target, a control device adapted to control the flow through the gas inlet, wherein the control device is adapted to control the at least one gas inlet such that a coating on a substrate using a sputtering process is performed in an atmosphere containing an O2 /H2 mixture in the sputtering chamber for forming an indium-tin-oxide layer.
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