| 摘要 |
PROBLEM TO BE SOLVED: To improve pixel characteristics of a CMOS solid-state imaging apparatus having a lateral type overflow structure, by suppressing variance of an overflow barrier. SOLUTION: The solid-state imaging apparatus includes: a plurality of pixels comprising a photoelectric conversion unit PD and pixel transistors, which are formed on a semiconductor substrate; and a floating diffusion unit FD in the pixel. Further, the solid-state imaging apparatus includes a first-conductivity-type semiconductor area 31 for surface pinning, which is formed over the surface of the pixel on the side of the photoelectric conversion unit PD and the surface of the semiconductor substrate below a transfer gate electrode 28 of a transfer transistor among the pixel transistors. Furthermore, the solid-state imaging apparatus includes a second-conductivity-type semiconductor area 32, formed below the entire area of the first-conductivity-type semiconductor area 31 and for forming an overflow path serving as an overflow path for the floating diffusion unit. The overflow barrier forming the overflow path is formed using the second-conductivity-type semiconductor area below the transfer gate electrode. A charge storage area is formed using an area in which the second-conductivity-type semiconductor area of the photoelectric conversion unit and the second-conductivity-type semiconductor area for forming the overflow path are superposed on each other. COPYRIGHT: (C)2011,JPO&INPIT |
