MRI SENSOR BASED ON THE HALL EFFECT FOR CRM IMD APPLICATIONS
摘要
<p>A method and device can include a Hall effect sensor, which can be formed as a portion of an integrated circuit of an implantable device and which can produce a non-linear current path such as to permit detecting a magnetic field parallel with the orientation of the Hall effect sensor of the implantable device.</p>
申请公布号
WO2011097297(A1)
申请公布日期
2011.08.11
申请号
WO2011US23477
申请日期
2011.02.02
申请人
44CARDIAC PACEMAKERS, INC.;MAILE, KEITH R.;BOON, SCOT, C.;CHAVAN, ABHI, V.
