| 摘要 |
<p>The large-scale cathode (1) for a magnetron sputtering within a vacuum chamber, comprises a target, and a device (2) for producing a magnetic field, which is enclosed itself on the surface of the target in a circular manner and is formed in a tunnel-shaped manner. The target is divided into two partial targets (3a, 3b, 3c) that are electrically insulatably formed from each other. The partial targets are supplied with an electrical energy separately from each other using power supply device (6). A portion of the circular magnetic field extends on the surface of each partial target. The large-scale cathode (1) for a magnetron sputtering within a vacuum chamber, comprises a target, and a device (2) for producing a magnetic field, which is enclosed itself on the surface of the target in a circular manner and is formed in a tunnel-shaped manner. The target is divided into two partial targets (3a, 3b, 3c) that are electrically insulatably formed from each other. The partial targets are supplied with an electrical energy separately from each other using power supply device (6). A portion of the circular magnetic field extends on the surface of each partial target. The separate power supply device is assigned to each of the two partial targets, which are supplied with electrical energy simultaneously or sequentially by the power supply device. The target is formed as rectangular target, where a separate line between the two adjacent partial targets is implemented transverse to the circular magnetic field. The target is formed as circular target or annular target, where the partial targets are formed as circular segment in the circular target or as annular segment of the target in the annular target. The two adjacent partial targets are spaced from each other by a gap, where the gap is formed as a concealed gap. A separate anode is assigned to the partial targets. In the process, high power impulse magnetron sputtering is carried out.</p> |
