| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of producing a transistor having large crystal grain, high mobility and uniform characteristics. SOLUTION: In the semiconductor manufacturing apparatus forming a semiconductor element by executing the vapor deposition of a semiconductor on a sample substrate in a vacuum chamber, a mask for shielding the semiconductor to be supplied from a vapor deposition source on a surface of the sample substrate is moved in the current flowing direction when designing the semiconductor element. The semiconductor manufacturing apparatus has a control device for controlling at least the mask moving speed so that v<SB>e</SB>/v<SB>m</SB>>t<SB>0</SB>d<SB>n</SB><SP>1/2</SP>is satisfied, wherein v<SB>e</SB>denotes the vapor deposition rate of supplying the semiconductor from the vapor deposition source, v<SB>m</SB>denotes the mask moving speed by a mask moving mechanism, t<SB>0</SB>denotes the monomolecular film thickness of the semiconductor, and d<SB>n</SB>denotes the density of the crystal growth nucleus on the surface of the sample substrate. COPYRIGHT: (C)2011,JPO&INPIT |
