| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor that makes the moving of carriers smooth and a method of manufacturing the same. <P>SOLUTION: A thin film transistor includes: a gate 33 formed on a substrate 31 through an oxide film 32, a channel 35 formed on the gate 33 through a gate insulation layer 34, and a floating channel 37 that is formed on the surface of the channel 35 by separating a source 36a and a drain 36b and enables smooth moving of carriers. The thin film transistor further includes an insulating layer 38 that controls the distance to the source 36a or drain 36b on the floating channel 37. <P>COPYRIGHT: (C)2011,JPO&INPIT |
