| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device which can suppress power consumption, and a semiconductor device which uses the memory device. <P>SOLUTION: A transistor having an oxide semiconductor film used as an active layer is provided for each of memory cells of a memory device as a switching element for holding an electric charge accumulated in the transistor functioning as a memory element. The transistor as the memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first and second gate electrodes, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and source and drain electrodes contacted with the semiconductor film. <P>COPYRIGHT: (C)2011,JPO&INPIT |
