| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a line to be connected to a semiconductor region on a semiconductor device on an SeOI substrate in an easy method. <P>SOLUTION: According to a first aspect, the invention relates to a semiconductor device fabricated on the SeOI (semiconductor-on-insulator) substrate comprising a thin layer (1) of a semiconductor material separated from a base substrate (2) by means of a buried insulating layer (3, BOX), the device comprising a first conducting region (1, D1, S, E) in the thin layer and a second conducting region (5, BL, SL, lL) in the base substrate and being characterized by a contact (I1, I2, I<SB>N</SB>, I<SB>P</SB>) connecting the first region to the second region through the insulating layer. According to a second aspect, the invention relates to a process for fabricating a semiconductor device regarding the first aspect. <P>COPYRIGHT: (C)2011,JPO&INPIT |
