| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a negative resist composition for ion beam writing having good thermal stability and storage stability, containing few ionic impurities such as Cl and Na, excellent in transparency in a wide wavelength region, and giving a resist pattern with a large film thickness and a high aspect ratio, and to provide a pattern forming method using the same. <P>SOLUTION: The negative resist composition for ion beam writing comprises (A) a resin which has a polymer unit of formula (1), a polymer unit prepared by ring opening polymerization and hydrogenation of a cyclic olefin, or a vinyl ether polymer unit, and is made slightly soluble or insoluble in a developer upon ion beam irradiation, and (B) at least one organic solvent which dissolves the resin (A). The pattern forming method employs the negative resist composition. <P>COPYRIGHT: (C)2011,JPO&INPIT |
