METHOD OF PROCESSING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To easily manufacture a thin semiconductor wafer in a relatively short time, prevent a crack of a substrate, and improve a production yield rate.

SOLUTION: A method of processing substrate includes the steps of: arranging a laser condensing unit 16 above a substrate 10 in a noncontact manner; irradiating a laser light onto a surface of the substrate 10 and condensing the laser light inside the substrate using the laser condensing unit 16; forming a two-dimensional interior reformed layer 12 inside the substrate 10 by relatively moving the laser condensing unit 16 and the substrate 10; forming at least one patterned reformed layer 36 on the side of the two-dimensional interior reformed layer 12 facing the laser condensing unit 16 or on an opposite side from the laser condensing unit 16 by relatively moving the laser condensing unit 16 and the substrate 10; exposing the patterned reformed layer 36 on the surface of the substrate 10; and etching the patterned reformed layer 36 and the two-dimensional interior reformed layer 12, wherein a relative moving direction of the laser condensing unit 16 and the substrate 10 is not same as a cleavage direction of the substrate 10.

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