| 摘要 |
PROBLEM TO BE SOLVED: To provide a terahertz wave emitting element which has a simple structure, is extremely small, can operate at room temperature, generates a pulse wave and a continuous wave of a terahertz wave (THz wave), and can perform of laser oscillation, and to provide a terahertz wave emitting device using the same. SOLUTION: The terahertz wave emitting element is characterized in that it includes an optical excitation light source, the optical energy of the light source is larger than or equal to the band gap energy of a semiconductor chip for emitting a terahertz wave, the semiconductor chip has a shallow impurity level of an activation energy EA and is formed of a material having the adjusted Fermi energy Ef so that the terahertz wave can be emitted at room temperature, and the terahertz wave is formed in such a way that photoluminescent light emitted when carriers optically excited based on band-to-band transition between the semiconductor chips are recombined with a conductive band or a valence electron band of the semiconductor chip through the shallow impurity level including the excited level may be the terahertz wave. Furthermore, a resonator is provided in the semiconductor chip so as to execute the laser oscillation of the terahertz wave. COPYRIGHT: (C)2011,JPO&INPIT |
