| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of increasing a memory capacity with no complex manufacturing process as compared with conventional one. SOLUTION: The semiconductor memory device is equipped with a plurality of memory cells, each including a semiconductor layer, a source layer and drain layer provided in the semiconductor layer, a body region which is provided in the semiconductor layer between the source layer and the drain layer, being in such electrically floating state as accumulates or releases electric charges for storing logical data, a gate insulating film which is provided on the body region and contains a ferroelectric film having polarization characteristic, and a gate electrode provided on the body region through the gate insulating film. Each of the memory cells stores a plurality of logical data according to the value of electric charges accumulated in the body region as well as a polarization state of the ferroelectric film. COPYRIGHT: (C)2011,JPO&INPIT |
