Operating a large-scale cathode for a magnetron sputtering within a vacuum chamber, where the cathode includes a target, comprises producing a magnetic field by a device, and dividing the target into two partial targets

摘要

The method for operating a large-scale cathode (1) for a magnetron sputtering within a vacuum chamber, where the cathode includes a target, comprises producing a magnetic field by a device (2), where the magnetic field is enclosed itself on the surface of the target in a circular manner and is formed in a tunnel-shaped manner, dividing the target into two partial targets (3a, 3b, 3c) electrically insulatably formed from each other, and supplying the partial targets with an electrical energy separately from each other using power supply device (6). The method for operating a large-scale cathode (1) for a magnetron sputtering within a vacuum chamber, where the cathode includes a target, comprises producing a magnetic field by a device (2), where the magnetic field is enclosed itself on the surface of the target in a circular manner and is formed in a tunnel-shaped manner, dividing the target into two partial targets (3a, 3b, 3c) electrically insulatably formed from each other, supplying the partial targets with an electrical energy separately from each other using power supply device (6), and extending a portion of the circular magnetic field on the surface of each partial target. The separate power supply device is assigned to each of the two partial targets, which are supplied with electrical energy simultaneously or sequentially by the power supply device. The target is formed as rectangular target, where a separate line between the two adjacent partial targets is implemented transverse to the circular magnetic field. The target is formed as circular target or annular target, where the partial targets are formed as circular segment in the circular target or as annular segment of the target in the annular target. The two adjacent partial targets are spaced from each other by a gap, where the gap is formed as a concealed gap. A separate anode is assigned to the partial targets. In the process, high power impulse magnetron sputtering is carried out. The partial target is applied with a DC voltage, which is temporarily superimposed with high power impulse magnetron sputtering-pulses.