| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor that has a region of high crystallization in a channel formation region, and ensures a high electric effect mobility and a large on-current. <P>SOLUTION: The thin-film transistor includes a first wiring layer containing reverse conical crystal particles in a semiconductor layer of a thin-film transistor and formed on a base layer, an impurity semiconductor layer having at least a part contacting the first wiring layer, a semiconductor layer having at least a part electrically connected to the first wiring layer via the impurity semiconductor layer, a first insulating layer formed on the semiconductor layer, a second insulating layer formed to cover at least the first insulating layer and the semiconductor layer, and a second wiring layer formed to be superimposed on at least part of the impurity semiconductor layer and between a source region and a drain region formed by the impurity semiconductor layer on the second semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
