发明名称 |
METHOD FOR FORMING SEMICONDUCTOR LAYER AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE |
摘要 |
A method for manufacturing a light emitting device according to an embodiment of the present invention includes preparing a growth substrate; selectively forming a projection pattern on the growth substrate; forming a first conductive type semiconductor layer on the growth substrate and the projection pattern; forming an active layer on the first conductive type semiconductor layer; forming a second conductive type semiconductor layer on the active layer; and executing an isolation etching for selectively removing the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer including the projection pattern.
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申请公布号 |
US2011195539(A1) |
申请公布日期 |
2011.08.11 |
申请号 |
US20100948085 |
申请日期 |
2010.11.17 |
申请人 |
KANG DAE SUNG;HAN SANG HOON |
发明人 |
KANG DAE SUNG;HAN SANG HOON |
分类号 |
H01L33/32;H01L33/44 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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