| 摘要 |
The electrically erasable programmable memory and its manufacturing method of the present invention forms above the floating gate the polysilicon spacer regions that are extended from the central part of the source region; the insulating part between the polysilicon spacer region and the floating gate has a smaller thickness to increase the capacitance between the floating gate and the polysilicon spacer region and further increasing the voltage coupled to the floating gate. Therefore, the present invention can effectively increase the coupling capacitance at the drain terminal, and has an advantage of low cost and easy production.
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