| 摘要 |
PROBLEM TO BE SOLVED: To enlarge a dynamic range, and to reduce noise. SOLUTION: By forming a potential barrier forming p-type layer 24 in a region in a p-well other than a region below a gate of a first MOS transistor 22, when charges are stored, the charges overflowing from a photo diode 21 can be made to flow into a channel 31 even if the first transfer MOS transistor 22 is turned off without fail as much as possible. Consequently, a dark current is prevented as much as possible from generating from an interface of a gate oxide film 41 of the first transfer MOS transistor 22, and simultaneously, the dynamic range of a solid-state imaging device is enlarged by using the charges stored in a floating diffusion region FD through the channel 31. COPYRIGHT: (C)2011,JPO&INPIT |
