| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, and so on, capable of stably acquiring low on-resistance, having once obtained high mobility of channel and superior breakdown voltage in the longitudinal direction. SOLUTION: In the semiconductor device, a GaN laminate 15 containing an n-type drift layer 4/a p-type layer 6/an n-type surface layer 8 is formed. The GaN laminate has an opening portion 5 and includes a regrowth layer 27, a gate electrode 11, a source electrode 31 and a drain electrode 39. The regrowth layer 27 contains an electron transit layer 22 and an electron supply layer 26, and a channel is a two-dimensional electron gas, and an epitaxial layer having a lattice constant which is smaller than GaN is inserted in at least one of between the p-type layer 6 and the n-type surface layer 8, and between an end surface of the GaN laminate surrounding the opening portion and the regrowth layer. COPYRIGHT: (C)2011,JPO&INPIT |
