METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a capacitor insulating film having a crystal structure of high dielectric constant by reducing the effect of crystallinity of an underling film. SOLUTION: A method of manufacturing a semiconductor device includes an amorphous film formation step for forming an amorphous film 320 on a crystalline film 310 which is formed on a substrate 200 and a crystalline insulating film formation step for forming an insulating film 330 having a crystal structure controlled independently from the crystal structure of the crystalline film 310 on the amorphous film 320. The crystalline insulating film formation step includes a phase transition step for causing phase transition of at least a part of the insulating film 330 to the tetragonal system by heating the substrate 200. COPYRIGHT: (C)2011,JPO&INPIT