| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which can reduce the content formed between wirings and which can control a variation in a threshold voltage of a memory cell, and to provide a method of manufacturing the device. SOLUTION: A nonvolatile semiconductor memory device includes a first floating gate FGa and a second floating gate FGb, formed on a semiconductor substrate 1 via a first insulating film 15; a first control gate CG1 which is formed on the first floating gate FGa via a third insulating film 18a and which has a first wide width portion 28a, the width of which is larger than that of the first floating gate FGa; a second control gate CG2 which is formed on the second floating gate FGb in the same manner and which has a second wide width portion 28b; an interlayer insulating film 17, formed in such a manner that it covers the first control gate CG1 and the second control gate CG2, and a gap portion GA formed on at least a portion between the first floating gate FGa and the second floating gate FGb in the interlayer insulating film 17. COPYRIGHT: (C)2011,JPO&INPIT
|
