发明名称 |
Strain Bars in Stressed Layers of MOS Devices |
摘要 |
A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS device. A portion of the active region forms a source/drain region of the MOS device. The semiconductor structure further includes a stressor region over the MOS device; and a stressor-free region inside the stressor region and outside the region over the active region.
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申请公布号 |
US2011195554(A1) |
申请公布日期 |
2011.08.11 |
申请号 |
US201113089765 |
申请日期 |
2011.04.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG YEN-SEN;LIN CHUNG-TE;CAO MIN;YANG SHENG-JIER |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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