发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method of fabricating a semiconductor device is provided. The method comprises: forming a first layer; forming a P-well on the first layer; forming an isolation region in the P-well; performing an extra implantation on a surface between the P-well and the first layer; and forming a source/drain region. The method of the present invention can solve the punch through problem of the conventional iso-NMOS transistor without increasing cost.
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申请公布号 |
US2011195553(A1) |
申请公布日期 |
2011.08.11 |
申请号 |
US20100701623 |
申请日期 |
2010.02.08 |
申请人 |
CHOU CHUN-YU;TUNG CHIEN-LIANG;LIN CHI-WEI |
发明人 |
CHOU CHUN-YU;TUNG CHIEN-LIANG;LIN CHI-WEI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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