发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a semiconductor device comprises: immersing a semiconductor substrates in a Pd activating solution containing Pd ions and adhering a Pd catalyst to a surface of the semiconductor substrate; and immersing the semiconductor substrate, to which the Pd catalyst is adhered, in a Pd electroless plating solution and forming an electroless-plated Pd film on the semiconductor substrate.
申请公布号 US2011195567(A1) 申请公布日期 2011.08.11
申请号 US20100871971 申请日期 2010.08.31
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 NISHIZAWA KOICHIRO
分类号 H01L21/768;H01L21/3205 主分类号 H01L21/768
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