SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve optical extraction efficiency by forming a pit in over the top surface of the light emitting device and multiplying light extraction efficiency to the outside through the four sides of the pit. CONSTITUTION: An n-type semiconductor layer(130) has one or more pits on the upper side. An active layer(140) is formed on the n-type semiconductor layer. The area corresponding to the pits has bent upper side along the pits. A p-type semiconductor layer(150) is formed on the active layer. The area corresponding to the pits has bent upper side along the active layer. The active layer and the upper side of the p-type semiconductor layer include a first area which is bent toward the pits and a second area which is not bent.