发明名称 FLASH BASED MEMORY COMPRISING A FLASH TRANSLATION LAYER AND METHOD FOR STORING A FILE THEREIN
摘要 <p>A Flash based memory (PH_MEM) comprising a Flash translation layer (FTL) is described. The Flash translation layer (FTL) comprises first translation information associating a first logical address of a logical file system (LG_MEM) with a first physical address of said flash based memory (PH_MEM). The logical file system (LG_MEM) emulates a sectored storage medium and the logical address is a logical sector start address. The logical file system (LG_MEM) comprises a number of logical stuffing bits (LSB) expanding a logical size of data of a file (PSF) stored in said Flash based memory (PH_MEM) such that the expanded logical size corresponds to an integer number of logical sectors (L_SEC) and the Flash translation layer (FTL) comprises second translation information associating a second logical address with a second physical address, the second translation information depending on said number of logical stuffing bits (LSB).</p>
申请公布号 EP2353074(A1) 申请公布日期 2011.08.10
申请号 EP20090752808 申请日期 2009.11.12
申请人 THOMSON LICENSING 发明人 WINTER, MARCO
分类号 G06F3/06;G06F12/02 主分类号 G06F3/06
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