| 摘要 |
FIELD: physics. ^ SUBSTANCE: nitride semiconductor device comprises n-doped semiconductor nitride layer, p-doped semiconductor nitride layer, active layer made between aforesaid layers by alternative application of layers with quantum wells and quantum barrier layers, electron blocking layer arranged between active layer and p-doped semiconductor nitride layer, and collector layer of holes arranged between active layer and said blocking layer and including region with higher-power valence zone compared with level of p-doped semiconductor nitride layer doping. ^ EFFECT: higher light intensity, reduced quantum efficiency. ^ 10 cl, 6 dwg |
