METHOD OF MEASURING NANO-SIZED CONDUCTING SURFACE RELIEF WITH PHOTON ULTIMATE ANALYSIS OF MATERIAL

摘要

FIELD: physics. ^ SUBSTANCE: proposed method comprises defining 3D profile of semiconductor or metal surface on bringing probe with metal tip thereto along vertical coordinate Z. Note here that surface under probe nano-tip is irradiated by optical radiation with wavelength from IR to UV with constant spectral power of radiation. Wavelength b corresponding to abrupt increase in tunnel current is recorded to determine semiconductor or metal material by power width of semiconductor forbidden zone Eg or work function of electrons A from metal at surface local area defined by probe nano-tip from relation Eg=1238/b, A=1238/b, where b is boundary wavelength in nm; Eg, A is forbidden zone width for probed semiconductor or work function for metal in eV for given surface point. ^ EFFECT: contactless measurement of ultimate composition. ^ 1 dwg