DUAL GATE FIELD-EFFECT TRANSISTOR AND METHOD OF PRODUCING A DUAL GATE FIELD-EFFECT TRANSISTOR,申请号KR20117011982-传众专利搜索

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发明名称	DUAL GATE FIELD-EFFECT TRANSISTOR AND METHOD OF PRODUCING A DUAL GATE FIELD-EFFECT TRANSISTOR
摘要
申请公布号	KR20110090955(A)	申请公布日期	2011.08.10
申请号	KR20117011982	申请日期	2009.10.26
申请人	KONINKLIJKE PHILIPS ELECTRONICS N.V.	发明人	DE LEEUW DAGOBERT M.;VAN HAL PAULUS A.;'T HOOFT GERT
分类号	H01L51/05	主分类号	H01L51/05
代理机构		代理人
主权项
地址

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