Device and method for producing single crystals by vapour deposition

摘要

Preparing crystals of silicon carbide, group III-nitride and/or its alloys involves continuously feeding vapor species containing elements of the crystal through an upstream opening (22) of the growth surface of a seed crystal contained in a heated growth enclosure; removing the undeposited vapor species through a opening downstream (25a) of the growth surface and passing an additional gas flow containing a halogen. An independent claim is included for a device for preparing the crystals.