发明名称 RESISTIVITY CONTROL METHOD OF SINGLE CRYSTAL AND SINGLE CRYSTAL MANUFACTURED BY THE METHOD
摘要 PURPOSE: A resistivity control method of a single crystal and single crystal manufactured by the method are provided to uniformly implement nonresistance in the length of an ingot by increasing the growth time of a body through pulling speed. CONSTITUTION: In a resistivity control method of a single crystal and single crystal manufactured by the method, a first pulling speed higher than the pulling speed of a soldering process is performed. A second pulling speed is decreased from the first pulling speed in a body growing process.
申请公布号 KR20110090499(A) 申请公布日期 2011.08.10
申请号 KR20100010317 申请日期 2010.02.04
申请人 LG SILTRON INCORPORATED 发明人 KIM, SANG HEE;HWANG, JUNG HA;KONG, JUNG HYUN;LEE, HONG WOO
分类号 C30B15/22;C30B15/04 主分类号 C30B15/22
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