发明名称 |
RESISTIVITY CONTROL METHOD OF SINGLE CRYSTAL AND SINGLE CRYSTAL MANUFACTURED BY THE METHOD |
摘要 |
PURPOSE: A resistivity control method of a single crystal and single crystal manufactured by the method are provided to uniformly implement nonresistance in the length of an ingot by increasing the growth time of a body through pulling speed. CONSTITUTION: In a resistivity control method of a single crystal and single crystal manufactured by the method, a first pulling speed higher than the pulling speed of a soldering process is performed. A second pulling speed is decreased from the first pulling speed in a body growing process.
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申请公布号 |
KR20110090499(A) |
申请公布日期 |
2011.08.10 |
申请号 |
KR20100010317 |
申请日期 |
2010.02.04 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
KIM, SANG HEE;HWANG, JUNG HA;KONG, JUNG HYUN;LEE, HONG WOO |
分类号 |
C30B15/22;C30B15/04 |
主分类号 |
C30B15/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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