| 摘要 |
<p>Producing single crystal made of silicon using molten granulate, comprises: generating a first volume of molten silicon between a growing single crystal and the bottom of a conical tube (1) made of silicon, using a first induction heating coil (2); generating a second volume of molten silicon using a second induction heating coil (7); melting the bottom of the tube to an extent that a through opening for the second volume of molten silicon is formed; and crystallizing the single crystal silicon on the growing single crystal using molten silicon of the first and the second volumes. Producing single crystal made of silicon using molten granulate, comprises: generating a first volume of molten silicon between a growing single crystal and the bottom of a conical tube (1) made of silicon, closed at the bottom, which encloses a central opening of a plate (3) made of silicon rotating itself, under which it extends the tube, using a first induction heating coil (2) that is arranged below the plate; generating a second volume of molten silicon using a second induction heating coil (7) that is arranged above the plate; melting the bottom of the tube to an extent that a through opening for the second volume of molten silicon is formed, where the through opening is formed at a point of time at which the second volume of the molten silicon is not present or is less than the double the volume of the first volume of the molten silicon; and crystallizing the single crystal silicon on the growing single crystal using molten silicon of the first and the second volumes.</p> |
