METHOD FOR PRODUCING MONOCRYSTALLINE N-SILICON REAR CONTACT SOLAR CELLS

摘要

The invention relates to a method for producing monocrystalline n-silicon rear contact solar cells having a specific structure for a rear, passivated p+ emitter facing the light and spatially separate n+ (BSF) regions and a front n+ profile, an aluminum or aluminum-containing thin film being applied to the rear of the silicon wafer and then said thin film being structured to obtain local openings. The structure obtained in this manner is provided with a dielectric which is locally removed by subsequent masking, said masking being done in the open region in such a manner that contact between the emitter and the BSF dopants is excluded during phosphorus doping.