| 摘要 |
822,721. Plate rectifiers. SIEMENSSCHUCKERTWERKE A.G. March 28, 1956 [March 28, 1955], No. 9769/56. Class 37. In a method of making a plate rectifier in which part of the semi-conductor, e.g. selenium, layer is covered with a counter-electrode and part with an insulating layer, a porous layer is applied to both the counter-electrode and the insulating layer and then united to the counterelectrode by fusion. The counter-electrode 3, e.g. of eutectic tin-cadmium alloy and insulating, e.g. stoving lacquer layer 4, are deposited by painting or by spraying through masks after which the assembly is heated to evaporate the lacquer solvent. A porous layer 5, of tin with a small addition of cadmium, which later forms the collector electrode is then sprayed on followed by a further layer 6. The heating operation to fuse the collector electrode and the layer 6 to the counter-electrode may also be used to crystallize the selenium layer. The inner edge of the counter-electrode layer is preferably chamfered to give a more intimate contact with the lacquer layer. |
