SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A semiconductor light emitting device is provided to prevent an overflow phenomenon of electronics and to improve injection efficiency of a hole, thereby improving luminous efficiency at the high current density. CONSTITUTION: An active layer(140) is formed by being laminated one or more quantum barrier layers and one or more quantum-well layers by turns on an n-type semiconductor layer(130). An electron blocking layer is formed on the active layer. The electron blocking layer has one multi-layer in which 3 layers are laminated. The 3 layers has different band gap. The layer which is contiguous to the active layer among the 3 layer has an inclined energy band structure.