SEMICONDUCTOR DEVICE USING VARIABLE RESISTANCE MATERIAL AND METHOD OF DRIVING THE SAME

摘要

PURPOSE: A semiconductor device using a variable resistance material and a method of driving the same are provided to implement a simple structure by using one semiconductor device using a conventional 1Tr-1R. CONSTITUTION: A semiconductor device using a variable resistance material and a method of driving the same comprises: a gate(16); a source(13) which are faced with a drain; a resistance variation layer of which an apply voltage is changed; and a resistance change layer(11) is interposed between the gate insulating layer and the gate.